Resonance enhancement of raman scattering from one-dimensional periodical structures of porous silicon

S. A. Dyakov, T. S. Perova, K. A. Gonchar, G. K. Mussabek, K. K. Dikhanbayev, V. Yu Timoshenko

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Using the method of oscillating dipoles we calculate intensities of the Stokes components of the Raman scattering from one-dimensional photonic crystals made of porous silicon as a function of the excitation wavelength in the range of 0.8-1.1 μm. The performed calculations enable us to explain a strong increase of the Raman scattering intensity, which is experimentally observed in multilayered periodic structures of porous silicon with period of ~100-200 nm under excitation with the wavelength correspondent to the edge of the photonic band gap. This effect is attributed to the resonant penetration of the excitation light into the sample in contrast to possible resonant out-coupling of the Raman scattered light from the sample. The resonant penetration results in an enhancement of the light-matter interaction and then the Raman scattering signal of the multilayered structure of porous silicon is increased by ~10 times in comparison with that for homogeneous porous silicon layer.

Original languageEnglish
Pages (from-to)591-595
Number of pages5
JournalJournal of Nanoelectronics and Optoelectronics
Volume7
Issue number6
DOIs
Publication statusPublished - Nov 2012
Externally publishedYes

Keywords

  • Multilayer
  • Oscillating Dipole
  • Photonic Crystal
  • Porous Silicon
  • Raman Scattering

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