Raman scattering by electron and phonon excitations in FeSi

Yu S. Ponosov, A. O. Shorikov, S. V. Streltsov, A. V. Lukoyanov, N. I. Shchegolikhina, A. F. Prekul, V. I. Anisimov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The temperature evolution of Raman scattering by electron and phonon excitations in FeSi is studied within the range of 10–500 K. At low temperatures, the frequency dependence for the spectra of light scattered by electrons exhibits vanishing intensity in the range up to 500–600 cm–1, which suggests the existence of an energy gap of about 70 meV. The calculations of the electronic excitation spectra based on the band structure determined using the LDA+DMFT technique (local electron density + dynamic mean field approximation) are in good agreement with the low-temperature experimental data and confirm that FeSi is a material with intermediate electron correlations. The changes in the shape of the electronic excitation spectrum and in the self-energy of optical phonons indicate a transition to the metallic state above 100 K. The analysis of experimental data demonstrates an appreciable decrease in the electron lifetime with the growth of temperature determining the (insulator–poor metal) transition.

Original languageEnglish
Pages (from-to)316-320
Number of pages5
JournalJETP Letters
Volume103
Issue number5
DOIs
Publication statusPublished - 1 Mar 2016
Externally publishedYes

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