Quasi-two-dimensional thermoelectricity in SnSe

V. Tayari, B. V. Senkovskiy, D. Rybkovskiy, N. Ehlen, A. Fedorov, C. Y. Chen, J. Avila, M. Asensio, A. Perucchi, P. Di Pietro, L. Yashina, I. Fakih, N. Hemsworth, M. Petrescu, G. Gervais, A. Grüneis, T. Szkopek

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250cm2/Vs at T=1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.

Original languageEnglish
Article number045424
JournalPhysical Review B
Volume97
Issue number4
DOIs
Publication statusPublished - 24 Jan 2018
Externally publishedYes

Fingerprint

Dive into the research topics of 'Quasi-two-dimensional thermoelectricity in SnSe'. Together they form a unique fingerprint.

Cite this