Porous Si anisotropy from photoluminescence polarization

D. Kovalev, M. Ben Chorin, J. Diener, F. Koch, Al L. Efros, M. Rosen, N. A. Gippius, S. G. Tikhodeev

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)


We report the observation of the anisotropic linear polarization of porous Si photoluminescence measured in two excitation geometries. In the normal excitation geometry (exciting beam normal to the sample (100) surface) linear luminescence polarization of as much as 20% is seen parallel to the excitation polarization. In the edge excitation geometry (exciting light incident on a cleaved edge of the sample) the luminescence polarization is aligned mainly in the [100] direction (normal to the surface). The effect is described within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and flattened, dielectric elliptical Si nanocrystals with preferred orientation in the [100] direction.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes


Dive into the research topics of 'Porous Si anisotropy from photoluminescence polarization'. Together they form a unique fingerprint.

Cite this