Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu Timoshenko, L. V. Krasil'nikova, V. Yu Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Population inversion of the energy levels of Er3+ ions in Si/Si1 - xGex:Er/Si (x = 0.28) structures has been achieved due to electron excitation transfer from the semiconductor matrix. An analysis of the photoluminescence kinetics at a wavelength of 1.54 μm shows that up to 80% of the Er3+ ions are converted into excited states. This effect, together with the high photoluminescence intensity observed in the structures studied, shows good prospects for obtaining lasers compatible with planar silicon technology.

Original languageEnglish
Pages (from-to)494-497
Number of pages4
JournalJETP Letters
Volume81
Issue number10
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Dive into the research topics of 'Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures'. Together they form a unique fingerprint.

Cite this