Population inversion of erbium ion states caused by energy transfer from silicon nanocrystals

V. Yu Timoshenko, O. A. Shalygina, D. M. Zhigunov, S. A. Teterukov, P. K. Kashkarov, M. Fujii, S. Hayashi, M. Zacharias

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Structures of silicon nanocrystals in erbium-doped silicon dioxide (nc-Si/SiO2:Er) exhibit efficient photoluminescence of Er,+ ions at 1.5 µm. The population inversion of Er,+ energy states can be achieved under strong optical pumping because of the energy transfer from the excitons in Si nanocrystals to the ions. The results obtained are discussed in view of possible applications of nc-Si/SiO2:Er structures in optical amplifiers and lasers compatible with Si-based technology.

Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures - Reviews and Short Notes to NANOMEETING 2005
Subtitle of host publicationReviews and Short Notes to Nanomeeting 2005: Minsk, Belarus, 24-27 May 2005
PublisherWorld Scientific Publishing Co.
Pages128-131
Number of pages4
ISBN (Electronic)9789812701947
ISBN (Print)9812562885, 9789812562883
DOIs
Publication statusPublished - 1 Jan 2005
Externally publishedYes
EventInternational Conference on Physics, Chemistry and Applications of Nanostructures Physics, NANOMEETING 2005 - Minsk, Belarus
Duration: 24 May 200527 May 2005

Publication series

NamePhysics, Chemistry and Application of Nanostructures - Reviews and Short Notes to NANOMEETING 2005

Conference

ConferenceInternational Conference on Physics, Chemistry and Applications of Nanostructures Physics, NANOMEETING 2005
Country/TerritoryBelarus
CityMinsk
Period24/05/0527/05/05

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