Population dynamics of excitons in silicon nanocrystals structures under strong optical excitation

Olga A. Shalygina, Denis M. Zhigunov, Dmitrii A. Palenov, Victor Yu Timoshenko, Pavel K. Kashkarov, M. Zacharias, Paul M. Koenraad

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 μm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO 2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages196-198
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 1 Jul 20076 Jul 2007

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Materials for Advanced Technologies, ICMAT 2007
Country/TerritorySingapore
Period1/07/076/07/07

Keywords

  • Energy transfer
  • Erbium ions
  • Photoluminescence
  • Silicon nanocrystals

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