Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix

V. Yu Timoshenko, D. M. Zhigunov, P. K. Kashkarov, O. A. Shalygina, S. A. Teterukov, R. J. Zhang, M. Zacharias, M. Fujii, Sh Hayashi

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9 Citations (Scopus)

Abstract

We present a study of the photoluminescence (PL) of structures of Si nanocrystals (nc-Si) in erbium-doped amorphous silicon dioxide. It is shown that the energy of excitons confined in nc-Si of 2-5 nm sizes is efficiently transferred to Er3+ ions in surrounding SiO2 and a strong PL line at 1.5 μm appears. At high excitation intensity the population inversion of Er3+ ion states is achieved. These results demonstrate good perspectives of Er-doped nc-Si/SiO2 structures for possible applications in Si-based optical amplifiers and lasers.

Original languageEnglish
Pages (from-to)1192-1195
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2006
Externally publishedYes

Keywords

  • Colloids and quantum structures
  • Nanoparticles
  • Optical properties
  • Optical spectroscopy

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