Micropowders of cubic boron nitride (cBN) doped with europium have been obtained by high-pressure synthesis. The photoluminescence (PL) of Eu 3+ ions introduced into the crystal lattice of cBN has been investigated. It has been established from kinetic studies of the PL that the Eu3+ ions in cBN are located in two crystallographic positions with low symmetry of the crystal field. Annealing the cBN micropowders increases the number of crystallographic positions of Eu3+ in cBN to four, while electron irradiation causes the PL intensity of the Eu3 ions to increase as a consequence of energy transport from the RC luminescent radiation centers. It has been established that, in an optoelectronic device, the UV electroluminescence of the InGaN/AlGaN/GaN heterostructure excites red PL of the Eu:cBN phosphor.
|Number of pages||8|
|Journal||Journal of Optical Technology (A Translation of Opticheskii Zhurnal)|
|Publication status||Published - Dec 2010|