Photoluminescence of GaAs/AlGaAs quantum ring arrays

Yu D. Sibirmovskii, I. S. Vasil’evskii, A. N. Vinichenko, I. S. Eremin, D. M. Zhigunov, N. I. Kargin, O. S. Kolentsova, P. A. Martyuk, M. N. Strikhanov

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Samples of epitaxial structures with GaAs/AlGaAs quantum rings different in morphology are grown by droplet epitaxy. The photoluminescence spectra of the samples are recorded at temperatures of 20–90 and 300 K. Intense peaks defined by quantum confinement of the charge-carrier energy in the quantum rings are observed in the optical region. The peaks are identified by estimating the energy of the ground state of electrons and holes in GaAs quantum rings and by recording the spectra of the samples after removing the layers with the quantum rings by etching. The average dimensions of the quantum rings are determined by atomic force microscopy and scanning electron microscopy. Some inferences about the factors that influence the emission spectrum and intensity of the epitaxial structures with quantum rings are drawn.

Original languageEnglish
Pages (from-to)638-643
Number of pages6
Issue number5
Publication statusPublished - 1 May 2015
Externally publishedYes


Dive into the research topics of 'Photoluminescence of GaAs/AlGaAs quantum ring arrays'. Together they form a unique fingerprint.

Cite this