Photoluminescence of erbium ions in heterostructures with silicon nanocrystals

D. M. Zhigunov, O. A. Shalygina, S. A. Teterukov, V. Yu Timoshenko, P. K. Kashkarov, M. Zacharias

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Photoluminescence properties of erbium-doped silicon dioxide layers containing silicon nanocrystals with 1.5-4.5 nm average size are investigated. It is found that the intensity and mean lifetime of the Er3+-ion photoluminescence depend on the nanocrystal size, optical pump intensity, and temperature. The results obtained are explained both by the effect of the local environment on Er3+ ions and by the manifestation of nonradiative deexcitation of ions caused by the transfer of energy back into the solid-state matrix and the Auger processes.

Original languageEnglish
Pages (from-to)1193-1197
Number of pages5
JournalSemiconductors
Volume40
Issue number10
DOIs
Publication statusPublished - Oct 2006
Externally publishedYes

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