Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes

I. A. Belogorokhov, Yu V. Ryabchikov, E. V. Tikhonov, V. E. Pushkarev, M. O. Breusova, L. G. Tomilova, D. R. Khokhlov

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

The study is concerned with the luminescence properties of ensembles of semiconductor structures containing organic phthalocyanine molecules with erbium ions as complexing agents. The photoluminescence spectra of the structures of the type of erbium monophthalocyanine, bisphthalocyanine, and triphthalocyanine are recorded. The photoluminescence peaks are detected at the wavelengths 888, 760, and 708 nm (and photon energies 1.4, 1.6, and 1.75 eV) corresponding to electronic transitions within the organic complexes. It is found that, when a metal complexing agent is introduced into the molecular structure of the ligand, the 708 nm luminescence peak becomes unobservable. It is shown that, in the bisphthalocyanine samples, the photoluminescence signal corresponding to transitions from the 4F 9/2 level of erbium ions is enhanced.

Original languageEnglish
Pages (from-to)321-324
Number of pages4
JournalSemiconductors
Volume42
Issue number3
DOIs
Publication statusPublished - Mar 2008
Externally publishedYes

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