Photoluminescence features of hydrogenated silicon films with amorphous/nanocrystalline mixed phase

A. V. Emelyanov, A. G. Kazanskii, P. A. Forsh, D. M. Zhigunov, M. V. Khenkin, N. N. Petrova, A. V. Kukin, E. I. Terukov, P. K. Kashkarov

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have studied structural, electrical and photoluminescence properties of hydrogenated nanocrystalline silicon films with different crystalline volume fractions (from 0-pristine amorphous silicon-to 55%). The crystalline volume fraction and the average diameter of Si nanocrystals were estimated using the position and the intensity of the peaks in Raman spectra of the samples. The photoluminescence spectra exhibit distinct features related to recombination in amorphous silicon (peak energy near 1.35 eV) and in silicon nanocrystals (peak near 1.52 eV). When the crystalline volume fraction approaches 55%, photoluminescence disappears. This was due to the appearance of the percolation path consisting of Si nanocrystals. Photoluminescence spectroscopy was proposed as a non-destructive method for determining of a small volume fraction of Si nanocrystals embedded in amorphous silicon.

Original languageEnglish
Pages (from-to)649-652
Number of pages4
JournalJournal of Nanoelectronics and Optoelectronics
Volume10
Issue number5
DOIs
Publication statusPublished - 1 Oct 2015
Externally publishedYes

Keywords

  • Amorphous silicon
  • Nanocrystalline silicon
  • Percolation
  • Photoluminescence
  • Si nanocrystals

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