Photocathodes based on graphene nanoplatelet emitters on semi-insulating GaAs photoswitch

O. Yilmazoglu, S. Al-Daffaie, F. Küppers, H. L. Hartnagel, Y. Neo, H. Mimura

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

A simple photocathode based on graphene nanoplatelets glued on semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. The graphene nanoplatelets act as field emitter array with low turn-on field. The photomodulation was achieved with a GaAs photoswitch in series to the bottom of the graphene nanoplatelet emitters. The position and power of the laser illumination (800 nm) was not critical for photomodulation.

Original languageEnglish
Title of host publicationTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
EditorsHans-Heinrich Braun, Oliver Groening, Martin Paraliev, Thomas Feurer, Soichiro Tsujino, Jens Gobrecht
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-22
Number of pages2
ISBN (Electronic)9781479953080
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014 - Engelberg, Switzerland
Duration: 6 Jul 201410 Jul 2014

Publication series

NameTechnical Digest - 2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014

Conference

Conference2014 27th International Vacuum Nanoelectronics Conference, IVNC 2014
Country/TerritorySwitzerland
CityEngelberg
Period6/07/1410/07/14

Keywords

  • field emitter
  • graphene
  • photocathode
  • semi-insulating GaAs

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