Orbital-assisted metal-insulator transition in VO2

M. W. Haverkort, Z. Hu, A. Tanaka, W. Reichelt, S. V. Streltsov, M. A. Korotin, V. I. Anisimov, H. H. Hsieh, H. J. Lin, C. T. Chen, D. I. Khomskii, L. H. Tjeng

Research output: Contribution to journalArticlepeer-review

302 Citations (Scopus)

Abstract

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.

Original languageEnglish
Article number196404
JournalPhysical Review Letters
Volume95
Issue number19
DOIs
Publication statusPublished - 4 Nov 2005
Externally publishedYes

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