Optical properties of silicon nanocrystals in silicon dioxide matrix over wide ranges of excitation intensity and energy

O. A. Shalygina, I. A. Kamenskikh, D. M. Zhigunov, V. Yu Timoshenko, P. K. Kashkarov, M. Zacharias, M. Fujii

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Photoluminescence properties and optical absorption of the structures of silicon nanocrystals (nc-Si) in silicon dioxide matrix (SiO 2) are investigated in extended ranges of the excitation photon energy from 3 to 20 eV and the photon flux from 10 16 to 10 19 cm -2. The experimental data are explained by considering the quantum confinement in nc-Si, energy transfer (exciton diffusion in nc-Si ensembles) and light scattering in dielectrically inhomogeneous medium, as well as an influence of the electronic states in the SiO 2 matrix on the excitation/de- excitation processes in nc-Si.

Original languageEnglish
Pages (from-to)147-151
Number of pages5
JournalJournal of Nanoelectronics and Optoelectronics
Volume4
Issue number1
DOIs
Publication statusPublished - Apr 2009
Externally publishedYes

Keywords

  • Energy transfer
  • Photoluminescence
  • Silicon nanocrystals

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