Optical measurement of the Rashba coefficient in GaAs/AlGaAs quantum wells

P. S. Eldridge, W. J.H. Leyland, P. G. Lagoudakis, O. Z. Karimov, M. Henini, D. Taylor, R. T. Phillips, R. T. Harley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

For conduction electrons moving in quantum wells, a transverse electric field appears as an effective magnetic field causing spin relaxation via the Dyakonov-Perel mechanism. For undoped samples, the strength of the effective magnetic field for a particular electric field and temperature is determined by the Rashba coefficient. By combining spin grating and relaxation measurements, we have measured the Rashba coefficient for GaAs/AlGaAs quantum wells. There is good agreement with k.p theory at low temperature. We observe a deviation from the theoretical value at higher temperatures which could be a result of higher order terms in the Rashba spin-orbit interaction not normally considered.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages395-396
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • Rashba
  • Spin-dynamics

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