Observation of the population inversion of erbium ion states in Si/Si 1-xGex:Er/Si structures under optical excitation

M. V. Stepikhova, L. V. Krasil'nikova, Z. F. Krasil'nik, V. G. Shengurov, V. Yu Chalkov, D. M. Zhigunov, O. A. Shalygina, V. Yu Timoshenko

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4 Citations (Scopus)


In this work we present the results of theoretical analysis and experimental studies carried out for Si/Si1-xGex:Er/Si structures considered as the candidates for a laser realization. Analysis of the electromagnetic modes distribution and parameters of Si/Si1-xGe x:Er/Si waveguides enabling strong localization of the optical modes in the active Si1-xGex:Er layers is given. The Si/Si 1-xGex:Er/Si structures in question were grown by the method of sublimation MBE in germane gas atmosphere. The capability of such a method for producing effectively emitting Si/Si1-xGe x:Er/Si structures has been demonstrated. The photoluminescence intensity of the structures produced is comparable with that determined for the uniformly doped Si:Er layers with the external quantum efficiency ∼0.4%. We show the possibility to achieve the population inversion of Er3+ ion states in Si/Si1-xGex:Er/Si structures under optical excitation. The population inversion of Er3+ states in these structures sets in at the pump density of ∼0.2 W/cm2 and reaches its maximal value at ∼4 W/cm2, where the concentration of Er 3+ ions being inversely populated amounts to ∼80% of the total concentration of optically active Er ions.

Original languageEnglish
Pages (from-to)893-896
Number of pages4
JournalOptical Materials
Issue number6-7
Publication statusPublished - May 2006
Externally publishedYes


  • Er-ions
  • Population inversion
  • Si/SiGe/Si waveguide structures


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