Nucleation and growth dynamics of MBE-grown topological insulator Bi 2Te3 films on Si (111)

Svetlana Borisova, Julian Krumrain, Gregor Mussler, Martina Luysberg, Detlev Grützmacher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Topological insulator Bi2Te3 films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages191-192
Number of pages2
Volume1566
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 29 Jul 20123 Aug 2012

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference31st International Conference on the Physics of Semiconductors, ICPS 2012
Country/TerritorySwitzerland
CityZurich
Period29/07/123/08/12

Keywords

  • molecular beam epitaxy
  • scanning tunneling microscopy
  • thin films
  • Topological insulators

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