Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers

O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

A new non-destructive method for visualization of free carrier accumulations in standard semiconductors wafers (VCA or scanning low-angle light scattering) is being proposed first. The method has been applied to visualize large-scale electrically active defect accumulations in a number of semiconductor crystals. It allows mapping and investigating technological semiconductor wafers, being sensitive to low concentration of free carriers in the accumulations.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsV.I. Pustovoy, Miroslav Jelinek
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages138-145
Number of pages8
ISBN (Print)0819416657
Publication statusPublished - 1994
Externally publishedYes
EventSecond International Symposium on Advanced Laser Technologies - Prague, Czech Republic
Duration: 8 Nov 199313 Nov 1993

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2332
ISSN (Print)0277-786X

Conference

ConferenceSecond International Symposium on Advanced Laser Technologies
CityPrague, Czech Republic
Period8/11/9313/11/93

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