New theoretical model for optical transitions in the photoreflectance spectrum from delta -doped structures

D. Beliaev, L. M.R. Scolfaro, J. R. Leite

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A theoretical approach to the interpretation of the physical mechanisms of electron transitions in delta -doped structures is proposed. Spatial variations of electric field and effective bandgap within the delta region are taken into account in order to simulate differential photoreflectance spectra from Si delta doping in GaAs. A good qualitative agreement between the theoretical results and recent experimental data confirms the validity of the present model. This indicates that photoreflectance spectra from delta -doped structures may be described in terms of the common three-dimensional two-particle Franz-Keldysh effect.

Original languageEnglish
Article number046
Pages (from-to)1479-1482
Number of pages4
JournalSemiconductor Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - 1993
Externally publishedYes

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