The results of spectral investigations of thermostimulated luminescence and temperature dependence of tunneling luminescence in the range of 4.2-300 K of highly oxidized porous silicon samples have been reported. Large dispersion of activation energies of trapping states connected with the main red-orange emission band, ΔEa ≈ 0.3 eV, and the non-monotonous temperature dependence of the Beckerel index of tunneling luminescence component decay have been experimentally established. To explain the obtained results a model has been proposed of charge carriers localization by "topological" traps related to undulating structure of silicon nanowires.
|Number of pages||10|
|Journal||Physics of Low-Dimensional Structures|
|Publication status||Published - 2003|