New Mechanism of Charge Carriers Localization in Silicon Nanowires

I. V. Blonskyy, V. M. Kadan, A. K. Kadashchuk, A. Yu Vakhnin, A. Ya Zhugayevych, L. V. Chervak

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The results of spectral investigations of thermostimulated luminescence and temperature dependence of tunneling luminescence in the range of 4.2-300 K of highly oxidized porous silicon samples have been reported. Large dispersion of activation energies of trapping states connected with the main red-orange emission band, ΔEa ≈ 0.3 eV, and the non-monotonous temperature dependence of the Beckerel index of tunneling luminescence component decay have been experimentally established. To explain the obtained results a model has been proposed of charge carriers localization by "topological" traps related to undulating structure of silicon nanowires.

Original languageEnglish
Pages (from-to)25-34
Number of pages10
JournalPhysics of Low-Dimensional Structures
Volume7-8
Publication statusPublished - 2003
Externally publishedYes

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