New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation

Ahid S. Hajo, Oktay Yilmazoglu, Franko Kuppers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper we report a new THz Schottky detector based on vertically contacted high doped (1 × 1018cm-3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes based on gallium arsenide (GaAs) it has better zero-bias operation of 100 μA @ 0.05 V raising to more than 1 mA @ 0.27 V for lower noise application.

Original languageEnglish
Title of host publication2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538638095
DOIs
Publication statusPublished - 25 Oct 2018
Externally publishedYes
Event43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018 - Nagoya, Japan
Duration: 9 Sep 201814 Sep 2018

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2018-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
Country/TerritoryJapan
CityNagoya
Period9/09/1814/09/18

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