Near surface quantum well excitons in magnetic fields

S. G. Tikhodeev, N. A. Gippius, A. B. Dzyubenko, L. V. Kulik, V. D. Kulakovskii, A. Forchel

Research output: Contribution to journalArticlepeer-review

Abstract

We have demonstrated theoretically and experimentally the strong dielectric enhancement of excitons in near-surface InGaAs/GaAs quantum wells, caused by the abrupt, one order of magnitude, decrease of the dielectric constant at the semiconductor-vacuum interface.

Original languageEnglish
Pages (from-to)580-583
Number of pages4
JournalPhysica B: Condensed Matter
Volume249-251
DOIs
Publication statusPublished - 17 Jun 1998
Externally publishedYes

Keywords

  • Dielectric enhancement
  • Excitons
  • Quantum wells

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