ZnCdSe/ZnSSe MQW structures for an electron beam pumped VCSEL with resonant periodic gain were grown by MOVPE at 425-470°C. Strong contamination of the structure by Ga from a GaAs substrate was found and its effect on the growth rate and photoluminescence characteristics was studied. A protective thin ZnSSe layer deposited at lower temperature (350°C) or thin layers of ZnS and ZnS/ZnSSe SL grown at temperature 425-470°C prevent Ga penetration and allowed improving the quality and periodicity of the structure. Based on the grown MQW structure, green VCSEL was fabricated. Lasing at 542 nm with 3 W output power was achieved at RT and 40 keV. The threshold was as low as 8 A/cm2.
|Number of pages||5|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2006|
|Event||12th International Conference on II-VI Compounds - Warsaw, Poland|
Duration: 12 Sep 2005 → 16 Sep 2005