MOVPE growth and study of ZnCdSe/ZnSSe MQW structures for green VCSELs

P. I. Kuznetsov, G. G. Yakushcheva, V. A. Jitov, L. Yu Zakharov, B. S. Shchamkhalova, V. I. Kozlovsky, D. A. Sannikov, Y. Ka Skasyrsky, M. D. Tiberi

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

ZnCdSe/ZnSSe MQW structures for an electron beam pumped VCSEL with resonant periodic gain were grown by MOVPE at 425-470°C. Strong contamination of the structure by Ga from a GaAs substrate was found and its effect on the growth rate and photoluminescence characteristics was studied. A protective thin ZnSSe layer deposited at lower temperature (350°C) or thin layers of ZnS and ZnS/ZnSSe SL grown at temperature 425-470°C prevent Ga penetration and allowed improving the quality and periodicity of the structure. Based on the grown MQW structure, green VCSEL was fabricated. Lasing at 542 nm with 3 W output power was achieved at RT and 40 keV. The threshold was as low as 8 A/cm2.

Original languageEnglish
Pages (from-to)771-775
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number4
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 12 Sep 200516 Sep 2005

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