Miniband structures and effective masses of n-type δ-doping superlattices in GaN

S. C.P. Rodrigues, A. L. Rosa, L. M.R. Scolfaro, D. Beliaev, J. R. Leite, R. Enderlein, J. L.A. Alves

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Self-consistent electronic structure calculations of n-type δ-doping superlattices (SLs) in GaN are performed using effective-mass theory and local density functional theory. The electron bulk mass of cubic GaN is obtained from ab initio full potential linear augmented plane wave (FLAPW) band-structure calculations. For the SLs, self-consistent potentials, subband levels, miniband dispersions and Fermi-level positions are calculated, assuming sheet donor concentrations up to 1013 cm-2 and periods between 50 Å and 400 Å which cover the whole range between an isolated-well and SL regime. The miniband effective masses exhibit strong dependence on the SL wavevector. The confinement effects in GaN n-type 6-doping SLs are strong enough to be seen experimentally in transport and optical properties. A comparison of the results obtained for GaN with δ-doped layers in other III-V compounds, such as GaAs, is made.

Original languageEnglish
Pages (from-to)981-988
Number of pages8
JournalSemiconductor Science and Technology
Volume13
Issue number9
DOIs
Publication statusPublished - Sep 1998
Externally publishedYes

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