Metastable excited states of a closed quantum dot probed by an aluminum single-electron transistor

J. C. Chen, Zhenghua An, T. Ueda, S. Komiyama, K. Hirakawa, V. Antonov

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Kinetics of a closed quantum dot (QD) in a GaAs AlGaAs heterostructure crystal are studied by probing the current through an aluminum single-electron transistor fabricated on top of the QD. Distinctly different characteristics of the Coulomb blockade oscillations are found in different gate bias conditions, indicating different regimes of the isolated QD. An excited state of the QD, where the electrostatic potential is significantly lifted up, as well as another excited state, where the electrostatic potential is significantly pulled down, are suggested. Both of the states are characterized by an extremely long life time roughly about 20 min. A model is proposed to consistently explain these states.

Original languageEnglish
Article number045321
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number4
DOIs
Publication statusPublished - 2006
Externally publishedYes

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