Metal-insulator transition and phase separation in doped AA-stacked graphene bilayer

A. O. Sboychakov, A. L. Rakhmanov, A. V. Rozhkov, Franco Nori

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


We investigate the doping of AA-stacked graphene bilayers. By applying a mean field theory at zero temperature we find that, at half-filling, the bilayer is an antiferromagnetic insulator. Upon doping, the homogeneous phase becomes unstable with respect to phase separation. The separated phases are undoped antiferromagnetic insulator and metal with a nonzero concentration of charge carriers. At sufficiently high doping, the insulating areas shrink and disappear, and the system becomes a homogeneous metal. The conductivity changes drastically upon doping, so the bilayer may be used as a switch in electronic devices. The effects of finite temperature are also discussed.

Original languageEnglish
Article number121401
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 4 Mar 2013
Externally publishedYes


Dive into the research topics of 'Metal-insulator transition and phase separation in doped AA-stacked graphene bilayer'. Together they form a unique fingerprint.

Cite this