MBE growth optimization of topological insulator Bi2Te 3 films

J. Krumrain, G. Mussler, S. Borisova, T. Stoica, L. Plucinski, C. M. Schneider, D. Grützmacher

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78 Citations (Scopus)

Abstract

We investigated the growth of the topological insulator Bi 2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi 2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalJournal of Crystal Growth
Volume324
Issue number1
DOIs
Publication statusPublished - 1 Jun 2011
Externally publishedYes

Keywords

  • A1. Atomic force microscopy
  • A1. Crystal structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Bismuth compounds
  • B2. Topological insulator

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