Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon

Boris V. Fine, Jeroen P.R. Bakker, Jaap I. Dijkhuis

Research output: Contribution to journalArticlepeer-review

Abstract

We describe a mechanism that links the long-range potential fluctuations induced by charged defects to the low-frequency resistance noise widely known as l/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and have found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.

Original languageEnglish
Pages (from-to)L443-L456
JournalFluctuation and Noise Letters
Volume5
Issue number3
DOIs
Publication statusPublished - Sep 2005
Externally publishedYes

Keywords

  • Amorphous silicon
  • l/f noise
  • Long-range potential fluctuations

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