Linear polarization of porous Si photoluminescence

N. A. Gippius, S. G. Tikhodeev, Al L. Efros, M. Rosen, D. Kovalev, M. Ben Chorin, J. Diener, F. Koch

Research output: Contribution to journalConference articlepeer-review


We demonstrate experimentally that linear polarization of porous Si photoluminescence depends significantly on the excitation geometry and describe this effect within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and flattened, dielectric elliptical Si nanocrystals with preferred orientation in the [100] direction. The theoretical best-fit analysis of the experimental data allows us to get certain information concerning the shapes and orientation of the ellipsoids.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995


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