Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires

N. A. Gippius, S. G. Tikhodeev, J. Rubio, J. M. Calleja, P. Ils, A. Forchel, V. D. Kulakovskii

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The photoluminescence and Raman scattering intensities of InGaAs/InP quantum well wires with wire widths Lx between 10 nm and 1 pm are strongly polarized parallel to the wire axis. This effect is mainly due to the spatial redistribution of the electric component of the electromagnetic field in the vicinity of the quantum wire.

Original languageEnglish
Pages (from-to)269-273
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume188
Issue number1
DOIs
Publication statusPublished - 1 Mar 1995
Externally publishedYes

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