Large scale growth and characterization of atomic hexagonal boron nitride layers

Li Song, Lijie Ci, Hao Lu, Pavel B. Sorokin, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry G. Kvashnin, Jun Lou, Boris I. Yakobson, Pulickel M. Ajayan

Research output: Contribution to journalArticlepeer-review

2076 Citations (Scopus)


Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called hite graphene, has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.

Original languageEnglish
Pages (from-to)3209-3215
Number of pages7
JournalNano Letters
Issue number8
Publication statusPublished - 11 Aug 2010
Externally publishedYes


  • Boron nitride
  • computation
  • electrical microscopy
  • optical and mechanical properties


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