Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices

A. A. Maksimov, S. V. Zaitsev, I. I. Tartakovskii, V. D. Kulakovskii, N. A. Gippius, D. R. Yakovlev, W. Ossau, G. Reuscher, A. Waag, G. Landwehr

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16 Citations (Scopus)

Abstract

Detailed investigations of ZnSe/BeTe type-II superlattices under high density photoexcitation have been performed. The dynamical characteristics of the indirect transition from the ZnSe conduction band to the BeTe valence band are studied by time-resolved spectroscopy. The radiative recombination time decreases by more than two orders of magnitude under high excitation conditions. A model which accounts for the dependence of band bending and lifetimes of spatially separated electrons and holes on the photoexcited carrier concentration is developed. Numerical dependences of: a) the recombination times, b) the photoluminescence (PL) kinetics, c) the weak sensitivity of PL linear polarization, and d) the nonmonotonic behaviour of hole relaxation time from ZnSe to BeTe on carrier concentration are in very good agreement with experimental results.

Original languageEnglish
Pages (from-to)523-527
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume221
Issue number1
DOIs
Publication statusPublished - Sep 2000
Externally publishedYes

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