Investigation of the light field of a semiconductor diode laser

A. V. Ankudinov, M. L. Yanul, S. O. Slipchenko, A. V. Shelaev, P. S. Dorozhkin, A. A. Podoskin, I. S. Tarasov

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser.

Original languageEnglish
Pages (from-to)26438-26448
Number of pages11
JournalOptics Express
Issue number21
Publication statusPublished - 20 Oct 2014
Externally publishedYes


Dive into the research topics of 'Investigation of the light field of a semiconductor diode laser'. Together they form a unique fingerprint.

Cite this