Properties of interfaces with no-common atom in type-II ZnSe/BeTe heterostructures are studied with polarization spectroscopy. Radiative recombination and its polarization anisotropy have been found to depend crucially on the interface configuration and excitation power. Effects of external and internal electric fields on the in-plane polarization are studied both numerically and experimentally at low and high levels of photoexcitation density.
|Number of pages||6|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2002|