Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures

A. A. Maksimov, S. V. Zaitsev, P. S. Dorozhkin, V. D. Kulakovskii, I. I. Tartakovskii, D. R. Yakovlev, W. Ossau, L. Hansen, G. Landwehr, A. Waag

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Properties of interfaces with no-common atom in type-II ZnSe/BeTe heterostructures are studied with polarization spectroscopy. Radiative recombination and its polarization anisotropy have been found to depend crucially on the interface configuration and excitation power. Effects of external and internal electric fields on the in-plane polarization are studied both numerically and experimentally at low and high levels of photoexcitation density.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
Publication statusPublished - 2002
Externally publishedYes

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