Integration and characterisation of Schottky diodes with a pre-amplifier for THz applications

Ahid S. Hajo, Oktay Yilmazoglu, Franko Kuppers, Thomas Kusserow

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This contribution deals with the investigation and characterisation of fully integrated broadband Terahertz (THz) Schottky diodes using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows almost 7 times higher forward current than the metallic NW with GaAs at 0.27 V with a capacitance of 0.5 fF and a series resistance of 29\ \Omega. The highest calculated cut-off frequency of 10.7 THz was obtained for a NW contacted vertical InGaAs diode.

Original languageEnglish
Title of host publication2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
PublisherIEEE Computer Society
Pages943-944
Number of pages2
ISBN (Electronic)9781728166209
DOIs
Publication statusPublished - 8 Nov 2020
Externally publishedYes
Event45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, United States
Duration: 8 Nov 202013 Nov 2020

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2020-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Country/TerritoryUnited States
CityVirtual, Buffalo
Period8/11/2013/11/20

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