Inspection of recombination active defects for SiGe and solar cells

O. V. Astafiev, V. P. Kalinushkin, N. V. Abrosimov

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Mapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1-xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.

Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume442
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 2 Dec 19966 Dec 1996

Fingerprint

Dive into the research topics of 'Inspection of recombination active defects for SiGe and solar cells'. Together they form a unique fingerprint.

Cite this