Initial stages of gold adsorption on silicon stepped surface at elevated temperatures

S. S. Kosolobov, Se Ahn Song, E. E. Rodyakina, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Experimental study performed by ultrahigh vacuum reflection electron microscopy and atomic force microscopy reveals step instability on Si(111) surface during gold deposition at elevated temperatures (higher than 900°C). Our results show that transformations of regular atomic steps into the system of step bunches and vice versa depend on the gold coverage and direction of the electrical current heating the sample. The mechanism and conditions of the surface morphology transformations are discussed.

Original languageEnglish
Pages (from-to)448-452
Number of pages5
JournalSemiconductors
Volume41
Issue number4
DOIs
Publication statusPublished - Apr 2007
Externally publishedYes

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