Influence of structural inhomogeneity on the luminescence properties of silicon nanocrystallites

I. V. Blonskiǐ, M. S. Brodyn, A. Yu Vakhnin, A. Ya Zhugayevych, V. M. Kadan, A. K. Kadashchuk

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The features of the photoluminescence and the manifestation of thermally stimulated and tunneling luminescence due to the separation of nonequilibrium charge carriers between the photoexcited silicon core of a nanocrystallite and its peripheral layers of SiOx and SiO2 are investigated for different forms of nanostructured silicon. A model is proposed wherein a "two-stroke charge piston" acts in turn on the electron and hole components by means of an Auger process which occurs under restricted volume conditions and brings about a spatial separation of the charge carriers.

Original languageEnglish
Pages (from-to)706-712
Number of pages7
JournalLow Temperature Physics
Volume28
Issue number8-9
DOIs
Publication statusPublished - 2002
Externally publishedYes

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