Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation

Aleksei V. Emelianov, Nikita P. Nekrasov, Maksim V. Moskotin, Georgy E. Fedorov, Nerea Otero, Pablo M. Romero, Vladimir K. Nevolin, Boris I. Afinogenov, Albert G. Nasibulin, Ivan I. Bobrinetskiy

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.

Original languageEnglish
Article number2000872
JournalAdvanced Electronic Materials
Volume7
Issue number3
DOIs
Publication statusPublished - Mar 2021

Keywords

  • carbon nanotubes
  • femtosecond lasers
  • photodetectors
  • photovoltaics
  • two-photon absorption

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