High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch

O. Yilmazoglu, S. Al-Daffaie, F. Kuppers, Y. Neo, H. Mimura

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high frequency photocathode based on a carbon nanotube (CNT)-yarn in series to a semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. This hybrid two-chip technology allows the separate optimization of the yarn emitter and the photoswitch. This concept can overcome the capacitance limitations of miniaturized high-frequency vacuum tubes. The used CNT yarn emitter with 20 μm diameter had a threshold electric fields of ∼1.8 V/μm( defined at 1mA/cm2) with a stable field emitter current up to 400 μA. The high-voltage photomodulation was up to 100 MHz.

Original languageEnglish
Title of host publication2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538657171
DOIs
Publication statusPublished - 1 Nov 2018
Externally publishedYes
Event31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan
Duration: 9 Jul 201813 Jul 2018

Publication series

Name2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018

Conference

Conference31st International Vacuum Nanoelectronics Conference, IVNC 2018
Country/TerritoryJapan
CityKyoto
Period9/07/1813/07/18

Keywords

  • Carbon nanotube
  • cNT yarn
  • photcathode
  • semiinsulating GaAs

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