Heteroepitaxial Ir layers on diamond

V. P. Martovitsky, S. A. Evlashin, N. V. Suetin, R. A. Khmelnitsky

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Ir layers were deposited on single-crystal diamond using magnetron sputtering at substrate temperatures ranging from 830 to 1150 °C. The grown films have high adhesion to diamond and a low surface roughness Rq = 4-6 nm according to the AFM measurements. Crystalline perfection of Ir layers was investigated using x-ray diffraction and heteroepitaxial growth of Ir on diamond was confirmed. Because the lattice parameters of Ir and diamond are significantly different (7.65%) and because the deposition temperature of Ir is low in comparison with its melting point (2443 °C), diffraction reflections of the films are similar to analogous reflections of diamond, but wider. The films consist of elongated crystallites of length 10-100 nm. By broadening the reciprocal lattice points, we conclude that the level of microstresses in the Ir films increases as the substrate temperature during deposition of Ir films on the (0 0 1) diamond substrate increases, and that the level of microstresses decreases for the films on the (0 1 1) substrate. Simultaneously, the misorientation of Ir crystallites on the (0 1 1) substrate also decreases with increasing temperature.

Original languageEnglish
Article number215401
JournalJournal of Physics D: Applied Physics
Volume44
Issue number21
DOIs
Publication statusPublished - 1 Jun 2011
Externally publishedYes

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