Fully integrated vertical nanocontact photomixer for continuous-wave terahertz generation

Shihab Al-Daffaie, Oktay Yilmazoglu, Franko Küppers, Hans Hartnagel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

A new type of a fully integrated vertical nanocontact THz photomixer was fabricated on LTG-GaAs/n+GaAs /SI-GaAs wafer with a single silver nanowire of 60nm. The new vertical structure provides simple fabrication steps and better performance in terms of stability and antenna integration. The THz output power itself can be increased due to high photocur-rent of ∼7.5mA and small device capacitance of ∼0.6 fF.

Original languageEnglish
Title of host publicationIRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982721
DOIs
Publication statusPublished - 11 Nov 2015
Externally publishedYes
Event40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 - Hong Kong, China
Duration: 23 Aug 201528 Aug 2015

Publication series

NameIRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

Conference

Conference40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Country/TerritoryChina
CityHong Kong
Period23/08/1528/08/15

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