FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells

Malek Rwaimi, Christopher G. Bailey, Peter J. Shaw, Thomas M. Mercier, Chirenjeevi Krishnan, Tasmiat Rahman, Pavlos G. Lagoudakis, Ray Hua Horng, Stuart A. Boden, Martin D.B. Charlton

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Solar cells based on GaAs often include a wide-bandgap semiconductor as a window layer to improve surface passivation. Such devices often have poor photon-to-electron conversion efficiency at higher photon energies due to parasitic absorption. In this article, we deposit FAPbBr3 perovskite quantum dots on the AlInP window layer of a GaAs thin-film solar cell to improve the external quantum efficiency (EQE) across its entire absorption range, resulting in an 18% relative enhancement of the short-circuit current density. Luminescent downshifting from the quantum dots to the GaAs device contributes to a large effective enhancement of the internal quantum efficiency (IQE) at shorter wavelengths. Additionally, improved surface passivation of the window layer results in a 14–16% broadband increase of the IQE. These mechanisms combined with increased overall photon collection (antireflective effects) results in a doubling of the EQE in the ultraviolet region of the solar spectrum. Our results show a promising application of perovskite nanocrystals to improve the performance of well-established thin-film solar cell technologies.

Original languageEnglish
Article number111406
JournalSolar Energy Materials and Solar Cells
Volume234
DOIs
Publication statusPublished - Jan 2022

Keywords

  • Gallium arsenide
  • Luminescence down shifting
  • Perovskite
  • Quantum dots
  • Solar cells

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