Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors

D. Beliaev, L. M.R. Scolfaro, J. R. Leite, G. M. Sipahi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A method to calculate the exchange-correlation potential for the homogeneous and inhomogeneous heavy and light hole gases is described. We present the results for the homogeneous hole gas of the diamond and zincblende type semiconductors. Due to the spin-mixed character of hole states, the exchange interaction also takes place between holes of different types. The exchange potentials depend on the mixture ratio between heavy and light holes. We study a decomposition of the exchange potentials into two parts representing the interaction between the holes of different types and the interaction between the holes of the same type. Exchange potentials of heavy holes are plotted versus heavy hole densities for various light hole concentrations.

Original languageEnglish
Pages (from-to)777-781
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume210
Issue number2
DOIs
Publication statusPublished - Dec 1998
Externally publishedYes

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