Evidence of a two-dimensional to three-dimensional transition in Si -doped GaAs structures

C. A.C. Mendonca, F. Plentz, J. B.B. Oliveira, E. A. Meneses, L. M.R. Scolfaro, D. Beliaev, S. M. Shibli, J. R. Leite

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23 Citations (Scopus)

Abstract

We report on the change of character, from an isolated well to a superlattice, of multiple -doped structures as a function of the doping period ds. This effect is evidenced by the drastic change in the photoluminescence excitation spectra and the deviation on the total electron density extracted from Shubnikovde Haas oscillation measurements as ds decreases. Self-consistent-calculation results performed for these systems are used for comparison.

Original languageEnglish
Pages (from-to)12316-12318
Number of pages3
JournalPhysical Review B
Volume48
Issue number16
DOIs
Publication statusPublished - 1993
Externally publishedYes

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