Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals

S. A. Dyakov, D. M. Zhigunov, A. Hartel, M. Zacharias, T. S. Perova, V. Yu Timoshenko

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Using the model of oscillating dipoles, we simulated the photoluminescence intensity of a triple-layered structure where the silicon nanocrystals layer was enclosed by buffer and capping silicon dioxide layers. It was found that a structure with an optimized buffer layer thickness exhibited photoluminescence which was approximately 20 times more intense than that from the structure without a buffer layer. Theoretical simulations were verified by photoluminescence measurements for the corresponding structures with silicon nanocrystals fabricated by plasma enhanced chemical vapour deposition.

Original languageEnglish
Article number061908
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
Publication statusPublished - 6 Feb 2012
Externally publishedYes

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