Electrophysical and cathodoluminescent properties of low-dimensional CdSSe/CdS structure

V. I. Kozlovsky, P. I. Kuznetsov, V. G. Litvinov, D. A. Sannikov, G. G. Yakuskckeva

Research output: Contribution to journalConference articlepeer-review


The CdSSe/CdS structure grown by metalorganic vapour phase epitaxy (MOVPE) and prepared for vertical cavity surface emitting laser (VCSEL) was investigated by the capacitance-voltage characteristics (CV), thermostimulated capacity (TSC), current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) methods. Deep levels (DLs) with an activation energies 0.279-1.145 eV were detected by CDLTS and TSC. Hole emission from the ground quantized level in the CdSSe quantum well (QW) was studied. The activation energy of hole emission was used for an estimation of the valence band offset in the type-II CdSSe/CdS heterostructure. Luminescence and laser properties are discussed.

Original languageEnglish
Pages (from-to)1156-1159
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2006
Externally publishedYes
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 12 Sep 200516 Sep 2005


Dive into the research topics of 'Electrophysical and cathodoluminescent properties of low-dimensional CdSSe/CdS structure'. Together they form a unique fingerprint.

Cite this