Electronic structure of clusters of A-15 compounds with radiation induced defects

E. V. Kuznetzov, V. I. Anisimov, V. A. Gubanov, B. N. Goshchitsckii, E. Z. Kurmaev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The electronic structure of the clusters [V3Si4]12-, [Nb3Sn4]12- and [Mo3Ge4]15- in crystalline V3Si, Nb3Sn, Mo3Ge compounds is calculated by the Extended Hückel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalSolid State Communications
Volume38
Issue number6
DOIs
Publication statusPublished - May 1981
Externally publishedYes

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